1/7 mds35/50/80series diode / scr module december 2000 - ed: 4 main features: description packaged in isotop modules, the mds series is based on the half-bridge scr-diode configuration. they are suitable for high power applications, using phase controlled bridges, such as soft-start circuits, welding equipment, motor speed controller. the compactness of the isotop package allows high power density and optimized power bus connections. thanks to their internal ceramic pad, they provide high voltage insulation (2500v rms), complying with ul standards (file ref: e81734). symbol value unit i t(rms) 50-70-85 a v drm /v rrm 800 and 1200 v i gt 50 and 100 ma absolute ratings (limiting values) symbol parameter value unit 35 50 80 i t(rms) rms on-state current 50 70 85 a i t(av) average on-state current (single phase-circuit, 180 conduction angle per device) tc=85 c253555 a i tsm i fsm non repetitive surge peak on-state current (tj initial = 25 c) tp = 8.3 ms tj = 25 c 420 630 730 a tp = 10 ms 400 600 700 i ti t value for fusing tp = 10 ms tj = 25 c 800 1800 2450 a 2 s di/dt critical rate of rise of on-state current i g =2xi gt ,tr 100 ns f= 60hz tj=125 c50 a/ m s i gm peak gate current tp = 20 m stj=125 c4 a p g(av) average gate power dissipation tj = 125 c1 w t stg t j storage junction temperature range operating junction temperature range -40to+150 -40to+125 c v rgm maximum peak reverse scr gate voltage 5 v isotop ? isotop is a registred trademark of stmicroelectronics pin connections
mds35/50/80series 2/7 electrical characteristics (tj = 25 c, unless otherwise specified) scr diode symbol test conditions mds unit 35 50 80 i gt v d =12v r l =30 w min. 5 10 ma max. 50 100 v gt max. 1.3 v v gd v d =v drm r l =3.3k w tj = 125 c min. 0.2 v i h i t = 500 ma gate open max. 80 ma i l i g =1.2i gt max. 120 ma dv/dt v d = 67% v drm gate open tj = 125 c min. 1000 v/ m s v tm i tm = 80 a tp = 380 m s tj = 25 cmax. 1.7 - - v i tm = 110 a tp = 380 m s -1.75- i tm = 170 a tp = 380 m s - - 1.75 v t0 threshold voltage tj = 125 cmax. 0.85 v r d dynamic resistance tj = 125 cmax. 11 7.0 5.5 m w i drm i rrm v drm /v rrm rated tj = 25 cmax. 20 m a tj = 125 c10ma symbol test conditions mds unit 35 50 80 v f i f =80a tj = 25 cmax. 1.7 - - v i f =110a -1.7- i f =170a --1.7 v t0 threshold voltage tj = 125 cmax. 0.85 v r d dynamic resistance tj = 125 cmax. 11 7.0 5.5 m w i r v r =v rrm tj = 25 cmax. 20 m a tj = 125 c10ma
mds35 / 50 / 80 series 3/7 thermal resistances product selector ordering information other information note : xxx = voltage symbol parameter value unit r th(j-c) junction to case (dc) mds35 1.00 c/w mds50 0.75 mds80 0.45 part number voltage (xxx) sensitivity package 800 v 1200 v mds35-xxx x x 50 ma isotop tm mds50-xxx x x 50 ma mds80-xxx x x 150 ma part number marking weight base quantity packing mode mds35-xxx mds35-xxx 27.0 g 10 tube msds50-xxx mds50-xxx 27.0 g 10 tube mds80-xxx mds80-xxx 27.0 g 10 tube scr module series current: 35: 50a 50: 70a 80: 85a voltage: 800: 800v 1200: 1200v
mds35/50/80series 4/7 fig. 1-1: maximum average power dissipation versus average on-state current (thyristor or diode, sinuso?dal waveform). fig. 1-2: maximum average power dissipation versus average on-state current (thyristor or diode, rectangular waveform). fig. 1-3: maximum total power dissipation versus output current on resistive or inductive load (single phase bridge rectifier, two packages). fig. 1-4: maximum total power dissipation versus output current (three phase bridge rectifier, three packages). fig. 2-1: average on-state current versus case temperature (thyristor or diode, sinuso?dal waveform). fig. 2-2: average on-state current versus case temperature (thyristor or diode, rectangular waveform).
mds35/50/80series 5/7 fig. 3: relative variation of thermal impedance junction to case versus pulse duration. fig. 4: relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). fig. 5-1: surge peak on-state current versus number of cycles (mds35 and mds50). fig. 5-2: surge peak on-state current versus number of cycles (mds80). fig. 6-1: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of i t (mds35 and mds50). fig. 6-2: non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of i t (mds80).
mds35/50/80series 6/7 fig. 7-1: on-state characteristics (thyristor or diode, maximum values) (mds35). fig. 7-2: on-state characteristics (thyristor or diode, maximum values) (mds50). fig. 7-3: on-state characteristics (thyristor or diode, maximum values) (mds80).
mds35/50/80series 7/7 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2000 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco singapore - spain - sweden - switzerland - united kingdom http://www.st.com package mechanical data isotop ? n recommended torque value: 1.3 nm (max. 1.5 nm) for the 6 x m4 screws (2 x m4 screws recom- mended for mounting the package on the heatsink and the 4 provided screws. n the screws supplied with the package are adapted for mounting on a board (or other types of termi- nals) with a thickness of 0.6 mm min. and 2.2 mm max. ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193
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